Signatures of van Hove singularities in the anisotropic in-plane optical conductivity of the topological semimetal Nb3SiTe6

  • We present a temperature-dependent infrared spectroscopy study on the layered topological semimetal Nb3SiTe6 combined with density-functional theory calculations of the electronic band structure and optical conductivity. Our results reveal an anisotropic behavior of the in-plane (ac-plane) optical conductivity, with three pronounced excitations located at around 0.15, 0.28, and 0.41 eV for the polarization of the incident radiation along the c axis. These excitations are well reproduced in the theoretical spectra. Based on the ab initio results, the excitations around 0.15 and 0.28 eV are interpreted as fingerprints of van Hove singularities in the electronic band structure and compared to the findings for other topological semimetals.

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Metadaten
Author:Jihaan Ebad-AllahGND, Alexander A. TsirlinORCiDGND, Y. L. Zhu, Z. Q. Mao, Christine A. KuntscherORCiDGND
Frontdoor URLhttps://opus.bibliothek.uni-augsburg.de/opus4/104601
ISSN:2469-9950OPAC
ISSN:2469-9969OPAC
Parent Title (English):Physical Review B
Publisher:American Physical Society (APS)
Type:Article
Language:English
Year of first Publication:2023
Release Date:2023/05/25
Volume:107
Issue:11
First Page:115115
DOI:https://doi.org/10.1103/physrevb.107.115115
Institutes:Mathematisch-Naturwissenschaftlich-Technische Fakultät
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Experimentalphysik II
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Experimentalphysik VI
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik