Anomalous Hall effect in the (In,Mn)Sb dilute magnetic semiconductor

  • High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and supports the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.

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Author:G. Mihály, M. Csontos, Sándor Bordács, István KézsmárkiORCiDGND, T. Wojtowicz, X. Liu, B. Jankó, J. K. Furdyna
Frontdoor URL
Parent Title (English):Physical Review Letters
Publisher:American Physical Society (APS)
Year of first Publication:2008
Publishing Institution:Universität Augsburg
Release Date:2018/11/29
First Page:107201
Institutes:Mathematisch-Naturwissenschaftlich-Technische Fakultät
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Experimentalphysik V
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Licence (German):Deutsches Urheberrecht