Transient I-V-characteristics of OLEDs with deep traps

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Metadaten
Author:S. Scheinert, G. Paasch, P. H. Nguyen, S. Berleb, Wolfgang BrüttingORCiDGND
URN:urn:nbn:de:bvb:384-opus4-677386
Frontdoor URLhttps://opus.bibliothek.uni-augsburg.de/opus4/67738
ISBN:2863322486OPAC
Parent Title (English):30th European Solid-State Device Research Conference, 11-13 Sept. 2000, Cork, Ireland
Publisher:IEEE
Place of publication:Piscataway, NJ
Editor:W. A. Lane, G. M. Crean, F. A. McCabe, H. Grünbacher
Type:Part of a Book
Language:English
Year of first Publication:2000
Publishing Institution:Universität Augsburg
Release Date:2020/05/01
First Page:444
Last Page:447
DOI:https://doi.org/10.1109/essderc.2000.194810
Institutes:Mathematisch-Naturwissenschaftlich-Technische Fakultät
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Experimentalphysik IV
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Licence (German):Deutsches Urheberrecht

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