Thermalization of photoexcited carriers in two-dimensional transition metal dichalcogenides and internal quantum efficiency of van der Waals heterostructures

  • Van der Waals semiconductor heterostructures could be a platform to harness hot photoexcited carriers in the next generation of optoelectronic and photovoltaic devices. The internal quantum efficiency of hot-carrier devices is determined by the relation between photocarrier extraction and thermalization rates. Using ab initio methods we show that the photocarrier thermalization time in single-layer transition metal dichalcogenides strongly depends on the peculiarities of the phonon spectrum and the electronic spin-orbit coupling. In detail, the lifted spin degeneracy in the valence band suppresses the hole scattering on acoustic phonons, slowing down the thermalization of holes by one order of magnitude as compared with electrons. Moreover, the hole thermalization time behaves differently in MoS2 and WSe2 because spin-orbit interactions differ in these seemingly similar materials. We predict that the internal quantum efficiency of a tunneling van der Waals semiconductor heterostructureVan der Waals semiconductor heterostructures could be a platform to harness hot photoexcited carriers in the next generation of optoelectronic and photovoltaic devices. The internal quantum efficiency of hot-carrier devices is determined by the relation between photocarrier extraction and thermalization rates. Using ab initio methods we show that the photocarrier thermalization time in single-layer transition metal dichalcogenides strongly depends on the peculiarities of the phonon spectrum and the electronic spin-orbit coupling. In detail, the lifted spin degeneracy in the valence band suppresses the hole scattering on acoustic phonons, slowing down the thermalization of holes by one order of magnitude as compared with electrons. Moreover, the hole thermalization time behaves differently in MoS2 and WSe2 because spin-orbit interactions differ in these seemingly similar materials. We predict that the internal quantum efficiency of a tunneling van der Waals semiconductor heterostructure depends qualitatively on whether MoS2 or WSe2 is used.show moreshow less

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Metadaten
Author:D. Yadav, M. Trushin, Fabian PaulyORCiDGND
URN:urn:nbn:de:bvb:384-opus4-699344
Frontdoor URLhttps://opus.bibliothek.uni-augsburg.de/opus4/69934
Parent Title (English):Physical Review Research
Publisher:American Physical Society
Type:Article
Language:English
Year of first Publication:2020
Publishing Institution:Universität Augsburg
Release Date:2020/02/05
Volume:2
First Page:043051
DOI:https://doi.org/10.1103/PhysRevResearch.2.043051
Institutes:Mathematisch-Naturwissenschaftlich-Technische Fakultät
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Theoretische Physik I
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Licence (German):CC-BY 4.0: Creative Commons: Namensnennung (mit Print on Demand)