Donor implanted back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems

Export metadata

Statistics

Number of document requests

Additional Services

Share in Twitter Search Google Scholar
Metadaten
Author:J. Scharnetzky, P. Baumann, C. Reichl, Helmut KarlGND, W. Dietsche, W. Wegscheider
Frontdoor URLhttps://opus.bibliothek.uni-augsburg.de/opus4/88103
ISSN:0268-1242OPAC
ISSN:1361-6641OPAC
Parent Title (English):Semiconductor Science and Technology
Publisher:IOP Publishing
Type:Article
Language:English
Year of first Publication:2021
Release Date:2021/07/29
Tag:Electrical and Electronic Engineering; Materials Chemistry; Electronic, Optical and Magnetic Materials; Condensed Matter Physics
Volume:36
Issue:8
First Page:085012
DOI:https://doi.org/10.1088/1361-6641/ac0d9a
Institutes:Mathematisch-Naturwissenschaftlich-Technische Fakultät
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Experimentalphysik IV