Efficient creation of dipolar coupled nitrogen-vacancy spin qubits in diamond

  • Coherently coupled pairs or multimers of nitrogen-vacancy defect electron spins in diamond have many promising applications especially in quantum information processing (QIP) but also in nanoscale sensing applications. Scalable registers of spin qubits are essential to the progress of QIP. Ion implantation is the only known technique able to produce defect pairs close enough to allow spin coupling via dipolar interaction. Although several competing methods have been proposed to increase the resulting resolution of ion implantation, the reliable creation of working registers is still to be demonstrated. The current limitation are residual radiation-induced defects, resulting in degraded qubit performance as trade-off for positioning accuracy. Here we present an optimized estimation of nanomask implantation parameters that are most likely to produce interacting qubits under standard conditions. We apply our findings to a well-established technique, namely masks written in electron-beamCoherently coupled pairs or multimers of nitrogen-vacancy defect electron spins in diamond have many promising applications especially in quantum information processing (QIP) but also in nanoscale sensing applications. Scalable registers of spin qubits are essential to the progress of QIP. Ion implantation is the only known technique able to produce defect pairs close enough to allow spin coupling via dipolar interaction. Although several competing methods have been proposed to increase the resulting resolution of ion implantation, the reliable creation of working registers is still to be demonstrated. The current limitation are residual radiation-induced defects, resulting in degraded qubit performance as trade-off for positioning accuracy. Here we present an optimized estimation of nanomask implantation parameters that are most likely to produce interacting qubits under standard conditions. We apply our findings to a well-established technique, namely masks written in electron-beam lithography, to create coupled defect pairs with a reasonable probability. Furthermore, we investigate the scaling behavior and necessary improvements to efficiently engineer interacting spin architectures.show moreshow less

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Metadaten
Author:I. Jakobi, S. A. Momenzadeh, F. Fávaro de Oliveira, J. Michl, F. Ziem, Matthias SchreckORCiDGND, P. Neumann, A. Denisenko, J. Wrachtrup
URN:urn:nbn:de:bvb:384-opus4-934320
Frontdoor URLhttps://opus.bibliothek.uni-augsburg.de/opus4/93432
ISSN:1742-6588OPAC
ISSN:1742-6596OPAC
Parent Title (English):Journal of Physics: Conference Series
Publisher:IOP Publishing
Type:Article
Language:English
Date of first Publication:2016/09/01
Publishing Institution:Universität Augsburg
Release Date:2022/03/25
Volume:752
Issue:1
First Page:012001
DOI:https://doi.org/10.1088/1742-6596/752/1/012001
Institutes:Mathematisch-Naturwissenschaftlich-Technische Fakultät
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Experimentalphysik IV
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Licence (German):CC-BY 3.0: Creative Commons - Namensnennung (mit Print on Demand)