Correlated barrier hopping in Ni0 films
- The ac conduction in NiO films has been investigated in the frequency range 10 Hz < v < 10^9 Hz and at temperatures between 10 and 300 K. The frequency and the temperature dependence of the electrical conductivity can be consistently explained within a model developed for the mechanism of charge transfer in amorphous semiconductors which proposes that charge carriers hop over potential barriers between defect sites, the height of the barriers being correlated with the intersite separation.
| Author: | Peter LunkenheimerORCiDGND, Alois LoidlORCiDGND, C. R. Ottermann, K. Bange |
|---|---|
| URN: | urn:nbn:de:bvb:384-opus4-8916 |
| Frontdoor URL | https://opus.bibliothek.uni-augsburg.de/opus4/1036 |
| Parent Title (English): | Physical Review B |
| Type: | Article |
| Language: | English |
| Year of Creation: | 1991 |
| Year of first Publication: | 1991 |
| Publishing Institution: | Universität Augsburg |
| Release Date: | 2008/06/20 |
| Tag: | NiO films; electrical conductivity; temperature dependence |
| GND-Keyword: | Elektrische Leitfähigkeit; Nickelmonoxid; Dünne Schicht; Temperaturabhängigkeit |
| Volume: | 44 |
| Issue: | 11 |
| First Page: | 5927 |
| Last Page: | 5930 |
| DOI: | https://doi.org/10.1103/PhysRevB.44.5927 |
| Institutes: | Mathematisch-Naturwissenschaftlich-Technische Fakultät |
| Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik | |
| Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Experimentalphysik V | |
| Dewey Decimal Classification: | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
