Buried epitaxial layers of 3C-SiC in Si(100) and Si(111) by ion beam synthesis: a structural characterization
| Author: | Jörg K. N. Lindner, Kerstin VolzGND, Bernd StritzkerGND |
|---|---|
| Frontdoor URL | https://opus.bibliothek.uni-augsburg.de/opus4/23026 |
| ISBN: | 9780750303354OPAC |
| Parent Title (English): | Silicon carbide and related materials 1995: proceedings of the Sixth International Conference, Kyoto, Japan, 18-21 September 1995 |
| Publisher: | Institute of Physics Pub. |
| Place of publication: | Philadelphia, PA |
| Editor: | S. Nakashima, H. Matsunami, S. Yoshida, H. Harima |
| Type: | Part of a Book |
| Language: | English |
| Year of first Publication: | 1996 |
| Release Date: | 2017/07/21 |
| First Page: | 145 |
| Last Page: | 148 |
| Series: | Institute of Physics Conference Series ; 142 |
| Institutes: | Mathematisch-Naturwissenschaftlich-Technische Fakultät |
| Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik | |
| Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Experimentalphysik IV |
