SiC precipitates formes in Si by simultaneous dual beam implantation of C+ and Si+ ions
| Author: | R. Kögler, F. Eichhorn, A. Mücklich, H. Reuther, V. Heera, W. Skorupa, Jörg K. N. Lindner |
|---|---|
| Frontdoor URL | https://opus.bibliothek.uni-augsburg.de/opus4/31906 |
| ISSN: | 0168-583xOPAC |
| Parent Title (English): | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| Publisher: | Elsevier |
| Place of publication: | Amsterdam |
| Type: | Article |
| Language: | English |
| Year of first Publication: | 2003 |
| Release Date: | 2017/07/21 |
| Volume: | 206 |
| First Page: | 989 |
| Last Page: | 993 |
| DOI: | https://doi.org/10.1016/S0168-583X(03)00908-X |
| Institutes: | Mathematisch-Naturwissenschaftlich-Technische Fakultät |
| Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik |
