Controlled strained layer epitaxial growth of EuTiO3 on buffered silicon
- In this work, we show the epitaxial growth of (111)-oriented EuTiO thin films on (001)-oriented silicon with an in situ grown yttria-stabilized zirconia (YSZ) buffer layer by pulsed laser deposition. X-ray diffraction measurements revealed a homogeneously strained EuTiO thin film with a strain dependency on the laser fluence during the film growth. From magnetization vs temperature measurements, we confirmed that the strained EuTiO films have an antiferromagnetic to ferromagnetic transition at 3.7 K, which disappeared for unstrained films. Furthermore, we used electron backscatter diffraction to analyze the columnar growth of EuTiO on YSZ, which showed four in-plane orientations.
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| Author: | Florian JungORCiD, Helmut KarlORCiDGND |
|---|---|
| URN: | urn:nbn:de:bvb:384-opus4-963043 |
| Frontdoor URL | https://opus.bibliothek.uni-augsburg.de/opus4/96304 |
| ISSN: | 0021-8979OPAC |
| ISSN: | 1089-7550OPAC |
| Parent Title (English): | Journal of Applied Physics |
| Publisher: | AIP Publishing |
| Place of publication: | Melville, NY |
| Type: | Article |
| Language: | English |
| Year of first Publication: | 2022 |
| Publishing Institution: | Universität Augsburg |
| Release Date: | 2022/06/27 |
| Tag: | General Physics and Astronomy |
| Volume: | 131 |
| Issue: | 20 |
| First Page: | 205303 |
| DOI: | https://doi.org/10.1063/5.0092582 |
| Institutes: | Mathematisch-Naturwissenschaftlich-Technische Fakultät |
| Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik | |
| Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Experimentalphysik IV | |
| Dewey Decimal Classification: | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
| Licence (German): |  CC-BY 4.0: Creative Commons: Namensnennung (mit Print on Demand) |
