Physical properties of semi‐insulating polycrystalline silicon: III. Infrared diagnosis of the polycrystalline‐Si/c‐Si interface
| Author: | P. Brüesch, Th. Stockmeier, F. Stucki, P. A. Buffat, J. K. N. Lindner |
|---|---|
| Frontdoor URL | https://opus.bibliothek.uni-augsburg.de/opus4/111429 |
| ISSN: | 0021-8979OPAC |
| ISSN: | 1089-7550OPAC |
| Parent Title (English): | Journal of Applied Physics |
| Publisher: | AIP Publishing |
| Place of publication: | Melville, NY |
| Type: | Article |
| Language: | English |
| Year of first Publication: | 1993 |
| Publishing Institution: | Universität Augsburg |
| Release Date: | 2024/02/19 |
| Tag: | General Physics and Astronomy |
| Volume: | 73 |
| Issue: | 11 |
| First Page: | 7701 |
| Last Page: | 7707 |
| DOI: | https://doi.org/10.1063/1.353967 |
| Institutes: | Mathematisch-Naturwissenschaftlich-Technische Fakultät |
| Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik |
