Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

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Author:Yogesh Singh Chauhan, Costin Anghel, Francois Krummenacher, Christian Maier, Renaud Gillon, Benoit Bakeroot, Bart Desoete, Steven Frere, Andre Baguenier Desormeaux, Abhinav SharmaGND, Michel Declercq, Adrian Mihai Ionescu
Frontdoor URLhttps://opus.bibliothek.uni-augsburg.de/opus4/103855
ISSN:0038-1101OPAC
Parent Title (English):Solid-State Electronics
Publisher:Elsevier BV
Place of publication:Amsterdam
Type:Article
Language:English
Year of first Publication:2006
Release Date:2023/04/28
Tag:Materials Chemistry; Electrical and Electronic Engineering; Condensed Matter Physics; Electronic, Optical and Magnetic Materials
Volume:50
Issue:11-12
First Page:1801
Last Page:1813
DOI:https://doi.org/10.1016/j.sse.2006.09.002
Institutes:Mathematisch-Naturwissenschaftlich-Technische Fakultät
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik
Mathematisch-Naturwissenschaftlich-Technische Fakultät / Institut für Physik / Lehrstuhl für Theoretische Physik II